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| MJE3440 SILICON NPN TRANSISTOR s s SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The MJE3440 is a NPN silicon epitaxial planar transistors in SOT-32 plastic package. It is designed for use in consumer and industrial line-operated applications. 1 3 2 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC IB P t ot T stg Tj Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Base Current Total Power Dissipation at Tcase 25 C o Value 350 250 5 0.3 0.15 15 -65 to +150 150 Uni t V V V A A W o o St orage Temperature Max. Operating Junction Temperature C C June 1997 1/5 MJE3440 THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max 8.33 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO I CEV I CEO Parameter Collector Cut-off Current (IE = 0) Collector Cut-off Current (V BE = -1.5V) Collector Cut-off Current (IB = 0) Emitter Cut-off Current (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage DC Current G ain Small Signal Current Gain Transistor Frequency Collector-Base Capacitance Test Cond ition s V CB = 250 V V CE = 300 V V CE = 200 V V EB = 5 V Min. Typ . Max. 20 500 50 Un it A A A A V V V I EBO V CE(sat ) V BE(s at) V BE h FE hf e fT C CBO 20 I C = 50 mA I C = 50 mA I C = 50 mA I C = 2 mA I C = 20 mA I C = 5 mA f = 1 KHz I C = 10 mA f = 5 MHz V CB = 10 V f = 1 MHz IB = 4 mA IB = 4 mA V CE = 10 V V CE = 10 V V CE = 10 V V CE = 10 V V CE = 10 V IE = 0 30 50 25 15 0.5 0.3 0.8 200 MHz 10 pF Pulsed: Pulse duration = 300s, duty cycle 1.5 % Safe Operating Area Derating Curve 2/5 MJE3440 DC Current Gain Collector-emitter Saturation Voltage Base-emitter Voltage Transition Frequency 3/5 MJE3440 SOT-32 (TO-126) MECHANICAL DATA mm MIN. A B b b1 C c1 D e e3 F G H H2 2.15 3 4.15 3.8 3.2 2.54 0.084 0.118 7.4 10.5 0.7 0.49 2.4 1.0 15.4 2.2 4.65 0.163 0.150 0.126 0.100 TYP. MAX. 7.8 10.8 0.9 0.75 2.7 1.3 16.0 MIN. 0.291 0.413 0.028 0.019 0.040 0.039 0.606 0.087 0.183 inch TYP. MAX. 0.307 0.445 0.035 0.030 0.106 0.050 0.629 DIM. H2 0016114 4/5 MJE3440 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada- China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . .. 5/5 |
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